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DMN3110SQ-7

DMN3110SQ-7 Diodes Incorporated

DMN3110SQ_Rev2-2_May2019.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
Mindestbestellmenge: 3000
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Technische Details DMN3110SQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN3110SQ-7 nach Preis ab 0.14 EUR bis 0.63 EUR

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DMN3110SQ-7 DMN3110SQ-7 Hersteller : Diodes Incorporated DIOD_S_A0009189225_1-2543176.pdf MOSFET MOSFET BVDSS: 25V-30V SOT23 T&R 3K
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.62 EUR
10+ 0.48 EUR
100+ 0.27 EUR
1000+ 0.18 EUR
3000+ 0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 5
DMN3110SQ-7 DMN3110SQ-7 Hersteller : Diodes Incorporated DMN3110SQ_Rev2-2_May2019.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
37+ 0.49 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 28
DMN3110SQ-7 Hersteller : Diodes Inc dmn3110sq.pdf N-Channel Enhancement Mode MOSFET Automotive AEC-Q101
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