DMN3060LVT-7 Diodes Incorporated
auf Bestellung 2000 Stücke:
Lieferzeit 150-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.78 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.43 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
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Technische Details DMN3060LVT-7 Diodes Incorporated
Description: MOSFET 25V~30V TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMN3060LVT-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3060LVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 25V~30V TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-26 |
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