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DMN3022LDG-13

DMN3022LDG-13 Diodes Incorporated


DMN3022LDG.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.96W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
auf Bestellung 153000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.58 EUR
6000+ 0.55 EUR
9000+ 0.53 EUR
Mindestbestellmenge: 3000
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Technische Details DMN3022LDG-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 7.6A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.96W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type D).

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DMN3022LDG-13 DMN3022LDG-13 Hersteller : Diodes Incorporated DIOD_S_A0005736941_1-2542741.pdf MOSFET MOSFET BVDSS: 25V-30V
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