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DMN3012LEG-7

DMN3012LEG-7 Diodes Incorporated

DMN3012LEG.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.12 EUR
Mindestbestellmenge: 1000
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Technische Details DMN3012LEG-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 10A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type D), Part Status: Active.

Weitere Produktangebote DMN3012LEG-7 nach Preis ab 0.98 EUR bis 2.55 EUR

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Preis ohne MwSt
DMN3012LEG-7 DMN3012LEG-7 Hersteller : Diodes Incorporated DIOD_S_A0008363640_1-2543098.pdf MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.52 EUR
10+ 2.06 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.04 EUR
2000+ 0.98 EUR
Mindestbestellmenge: 2
DMN3012LEG-7 DMN3012LEG-7 Hersteller : Diodes Incorporated DMN3012LEG.pdf Description: MOSFET 2N-CH 30V 10A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 2.08 EUR
100+ 1.62 EUR
500+ 1.37 EUR
Mindestbestellmenge: 7
DMN3012LEG-7 Hersteller : Diodes Zetex dmn3012leg.pdf Trans MOSFET N-CH 30V 10A 8-Pin PowerDI EP T/R
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