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DMN3012LDG-7

DMN3012LDG-7 Diodes Incorporated


DMN3012LDG-1371125.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 1K
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Technische Details DMN3012LDG-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 10A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type D), Part Status: Obsolete.

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DMN3012LDG-7 DMN3012LDG-7 Hersteller : Diodes Incorporated DMN3012LDG.pdf Description: MOSFET 2N-CH 30V 10A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Part Status: Obsolete
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