auf Bestellung 760000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.28 EUR |
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Technische Details DMN3009SK3-13 Diodes Zetex
Description: MOSFET N-CHANNEL 30V 80A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.4W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V.
Weitere Produktangebote DMN3009SK3-13 nach Preis ab 0.3 EUR bis 1.04 EUR
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DMN3009SK3-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CHANNEL 30V 80A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V |
auf Bestellung 760000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3009SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 100A Power dissipation: 3.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2316 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3009SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 100A Power dissipation: 3.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2316 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3009SK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 25V-30V |
auf Bestellung 3598 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3009SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CHANNEL 30V 80A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V |
auf Bestellung 760804 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3009SK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |