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DMN2991UFA-7B

DMN2991UFA-7B Diodes Incorporated


DMN2991UFA.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
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Technische Details DMN2991UFA-7B Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X2-DFN0806-, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V.

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DMN2991UFA-7B Hersteller : Diodes Incorporated DMN2991UFA-3240633.pdf Diodes Inc. MOSFET BVDSS: 8V~24V X2-DFN0806-3 T&R 10K
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