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DMN2990UFO-7B

DMN2990UFO-7B Diodes Incorporated

DMN2990UFO.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
auf Bestellung 720000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.2 EUR
30000+ 0.18 EUR
50000+ 0.17 EUR
Mindestbestellmenge: 10000
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Technische Details DMN2990UFO-7B Diodes Incorporated

Description: MOSFET N-CH 20V 750MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0604-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V.

Weitere Produktangebote DMN2990UFO-7B nach Preis ab 0.21 EUR bis 0.77 EUR

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Preis ohne MwSt
DMN2990UFO-7B DMN2990UFO-7B Hersteller : Diodes Incorporated DMN2990UFO.pdf Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
auf Bestellung 720910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
28+ 0.63 EUR
100+ 0.43 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
5000+ 0.21 EUR
Mindestbestellmenge: 23
DMN2990UFO-7B Hersteller : Diodes Incorporated DIOD_S_A0007713650_1-2543068.pdf MOSFET MOSFETBVDSS: 8V-24V
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