auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.69 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.2 EUR |
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Technische Details DMN2990UFB-7B Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW, Kind of package: reel; tape, Drain-source voltage: 20V, Drain current: 620mA, On-state resistance: 1.8Ω, Type of transistor: N-MOSFET, Power dissipation: 920mW, Polarisation: unipolar, Gate charge: 410pC, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: 1.5A, Mounting: SMD, Case: X1-DFN1006-3, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN2990UFB-7B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN2990UFB-7B | Hersteller : Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V X1-DFN1006- |
auf Bestellung 470000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 620mA On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 920mW Polarisation: unipolar Gate charge: 410pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Mounting: SMD Case: X1-DFN1006-3 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
| DMN2990UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 620mA; Idm: 1.5A; 920mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 620mA On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 920mW Polarisation: unipolar Gate charge: 410pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Mounting: SMD Case: X1-DFN1006-3 |
Produkt ist nicht verfügbar |