DMN2990UDJ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 7310000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.16 EUR |
| 50000+ | 0.15 EUR |
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Technische Details DMN2990UDJ-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.45A SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 450mA, Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-963, Part Status: Active.
Weitere Produktangebote DMN2990UDJ-7 nach Preis ab 0.15 EUR bis 0.67 EUR
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DMN2990UDJ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V SOT963,10K |
auf Bestellung 88470 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2990UDJ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.45A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
auf Bestellung 7316005 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2990UDJ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.3A; 0.35W; SOT963 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.3A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMN2990UDJ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.3A; 0.35W; SOT963 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.3A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 |
Produkt ist nicht verfügbar |