DMN2710UVQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 0.92A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.099 EUR |
| 6000+ | 0.095 EUR |
| 9000+ | 0.082 EUR |
| 30000+ | 0.081 EUR |
| 75000+ | 0.067 EUR |
| 150000+ | 0.066 EUR |
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Technische Details DMN2710UVQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.92A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 920mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN2710UVQ-7 nach Preis ab 0.077 EUR bis 0.57 EUR
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DMN2710UVQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.92A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 154220 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2710UVQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V SOT563 T&R 3K |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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