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DMN25D0UFA-7B

DMN25D0UFA-7B Diodes Incorporated

DMN25D0UFA.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 240MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V
auf Bestellung 480000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.13 EUR
50000+ 0.12 EUR
Mindestbestellmenge: 10000
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Technische Details DMN25D0UFA-7B Diodes Incorporated

Description: MOSFET N-CH 25V 240MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V.

Weitere Produktangebote DMN25D0UFA-7B nach Preis ab 0.14 EUR bis 0.57 EUR

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Preis ohne MwSt
DMN25D0UFA-7B DMN25D0UFA-7B Hersteller : Diodes Incorporated DMN25D0UFA.pdf Description: MOSFET N-CH 25V 240MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.9 pF @ 10 V
auf Bestellung 489365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
40+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.16 EUR
5000+ 0.15 EUR
Mindestbestellmenge: 32
DMN25D0UFA-7B DMN25D0UFA-7B Hersteller : Diodes Incorporated DMN25D0UFA.pdf MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.63W
auf Bestellung 14728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.57 EUR
10+ 0.47 EUR
100+ 0.24 EUR
1000+ 0.17 EUR
2500+ 0.15 EUR
20000+ 0.14 EUR
Mindestbestellmenge: 5