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DMN2400UFDQ-13

DMN2400UFDQ-13 Diodes Incorporated


Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1212-3 (Type C)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 16 V
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Technische Details DMN2400UFDQ-13 Diodes Incorporated

Description: MOSFET N-CH 20V 900MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN1212-3 (Type C), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 16 V.

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DMN2400UFDQ-13 DMN2400UFDQ-13 Hersteller : Diodes Incorporated DMN2400UFDQ-767510.pdf MOSFET 20V N-Ch Enh FET VL Gate 1.0V
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