Technische Details DMN2215UDM-7 Diodes Inc
Description: MOSFET 2N-CH 20V 2A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 650mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26.
Weitere Produktangebote DMN2215UDM-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN2215UDM-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
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DMN2215UDM-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 2A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 |
Produkt ist nicht verfügbar |
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DMN2215UDM-7 | Hersteller : Diodes Incorporated |
MOSFET 650mW 20V |
Produkt ist nicht verfügbar |