Produkte > DIODES INCORPORATED > DMG6302UDW-13
DMG6302UDW-13

DMG6302UDW-13 Diodes Incorporated

DMG6302UDW.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 25V 0.15A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.08 EUR
30000+ 0.078 EUR
50000+ 0.065 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMG6302UDW-13 Diodes Incorporated

Description: MOSFET 2P-CH 25V 0.15A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 310mW (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V, Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363.

Weitere Produktangebote DMG6302UDW-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMG6302UDW-13 Hersteller : Diodes Incorporated DIOD_S_A0012994438_1-2513091.pdf MOSFET MOSFET BVDSS: 25V~30V SOT363 T&R 10K
Produkt ist nicht verfügbar