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DMC3035LSD-13

DMC3035LSD-13 Diodes Inc


ds31312.pdf Hersteller: Diodes Inc
Trans MOSFET N/P-CH 30V 6.9A/5A 8-Pin SOP T/R
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Technische Details DMC3035LSD-13 Diodes Inc

Description: MOSFET N/P-CH 30V 6.9A/5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A, Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Obsolete.

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DMC3035LSD-13 DMC3035LSD-13 Hersteller : Diodes Incorporated ds31312.pdf Description: MOSFET N/P-CH 30V 6.9A/5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
DMC3035LSD-13 DMC3035LSD-13 Hersteller : Diodes Incorporated ds31312-1164721.pdf MOSFET CMPLMNTRY PR ENHCMNT
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