DMC2710UVT-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 20V 1.2A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 75000+ | 0.12 EUR |
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Technische Details DMC2710UVT-7 Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.2A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V, Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-23-6.
Weitere Produktangebote DMC2710UVT-7 nach Preis ab 0.14 EUR bis 0.77 EUR
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DMC2710UVT-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 4886 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2710UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 20V 1.2A TSOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-23-6 |
auf Bestellung 142833 Stücke: Lieferzeit 10-14 Tag (e) |
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