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DMC25D1UVT-13

DMC25D1UVT-13 Diodes Incorporated


DMC25D1UVT.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/12V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
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Technische Details DMC25D1UVT-13 Diodes Incorporated

Description: MOSFET N/P-CH 25V/12V TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 25V, 12V, Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26.

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DMC25D1UVT-13 DMC25D1UVT-13 Hersteller : Diodes Incorporated DMC25D1UVT-553071.pdf MOSFET 20V Enh Mode FET
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