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DIT195N08 Diotec Semiconductor
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Description: MOSFET TO220AB N 85V 0.0035OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16880 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.51 EUR |
50+ | 3.57 EUR |
100+ | 3.06 EUR |
500+ | 2.72 EUR |
1000+ | 2.33 EUR |
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Technische Details DIT195N08 Diotec Semiconductor
Description: MOSFET TO220AB N 85V 0.0035OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 4.95mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 85 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16880 pF @ 25 V.
Weitere Produktangebote DIT195N08 nach Preis ab 1.86 EUR bis 2.67 EUR
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DIT195N08 | Hersteller : Diotec Semiconductor |
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auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT195N08 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Heatsink thickness: max. 1.2mm Power dissipation: 300W Drain-source voltage: 85V Drain current: 148A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 850A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT195N08 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Heatsink thickness: max. 1.2mm Power dissipation: 300W Drain-source voltage: 85V Drain current: 148A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 850A |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT195N08 | Hersteller : Diotec Semiconductor |
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