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DIT120N08 DIOTEC SEMICONDUCTOR
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 450A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.37 EUR |
59+ | 1.22 EUR |
66+ | 1.09 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
250+ | 0.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DIT120N08 DIOTEC SEMICONDUCTOR
Description: MOSFET TO220AB N 80V 0.0049OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.
Weitere Produktangebote DIT120N08 nach Preis ab 0.96 EUR bis 4.58 EUR
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DIT120N08 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 84A Pulsed drain current: 450A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: THT Gate charge: 163nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor |
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auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT120N08 | Hersteller : Diotec Electronics |
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auf Bestellung 946 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor |
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