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DIT090N06 DIOTEC SEMICONDUCTOR
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 62A
Pulsed drain current: 310A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
84+ | 0.86 EUR |
96+ | 0.75 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
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Technische Details DIT090N06 DIOTEC SEMICONDUCTOR
Description: MOSFET TO220AB N 65V 0.0057OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V.
Weitere Produktangebote DIT090N06 nach Preis ab 0.61 EUR bis 3.12 EUR
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DIT090N06 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 62A; Idm: 310A; 160W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 62A Pulsed drain current: 310A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.2mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 823 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT090N06 | Hersteller : Diotec Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT090N06 | Hersteller : Diotec Semiconductor |
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auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT090N06 | Hersteller : Diotec Electronics |
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auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT090N06 Produktcode: 188342 |
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DIT090N06 | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |