![DIT080N08-AQ DIT080N08-AQ](https://ce8dc832c.cloudimg.io/v7/_cdn_/F4/32/01/00/0/1057615_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=2295ec483ca6f4a2c37ee007ab4bfa5d1aecf247)
DIT080N08-AQ DIOTEC SEMICONDUCTOR
![dit080n08.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB
Mounting: THT
Case: TO220AB
Drain-source voltage: 85V
Drain current: 51A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 62.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 75nC
Heatsink thickness: max. 1.2mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DIT080N08-AQ DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 85 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DIT080N08-AQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
DIT080N08-AQ | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
![]() |
DIT080N08-AQ | Hersteller : Diotec Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
DIT080N08-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB Mounting: THT Case: TO220AB Drain-source voltage: 85V Drain current: 51A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 62.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 75nC Heatsink thickness: max. 1.2mm Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 480A |
Produkt ist nicht verfügbar |