DI110N15PQ-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Pulsed drain current: 145A
Power dissipation: 62W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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Technische Details DI110N15PQ-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET, PowerQFN 5x6, 150V, 110A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-QFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 75 V.
Weitere Produktangebote DI110N15PQ-AQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DI110N15PQ-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, PowerQFN 5x6, 150V, 110A Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 75 V |
Produkt ist nicht verfügbar |
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DI110N15PQ-AQ | Hersteller : Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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DI110N15PQ-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 74A; Idm: 145A; 62W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 74A Pulsed drain current: 145A Power dissipation: 62W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |