DI110N06D1 DIOTEC SEMICONDUCTOR
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DI110N06D1 DIOTEC SEMICONDUCTOR
Description: MOSFET, DPAK, N, 65V, 110A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 30 V, Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V.
Weitere Produktangebote DI110N06D1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
DI110N06D1 | Hersteller : Diotec Semiconductor AG |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 4211 pF @ 30 V |
Produkt ist nicht verfügbar |
|
![]() |
DI110N06D1 | Hersteller : Diotec Semiconductor |
![]() |
Produkt ist nicht verfügbar |