Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > DF2B6.8M1ACT,L3F
DF2B6.8M1ACT,L3F

DF2B6.8M1ACT,L3F Toshiba Semiconductor and Storage

DF2B6.8M1ACT_datasheet_en_20180202.pdf?did=13209&prodName=DF2B6.8M1ACT Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.083 EUR
20000+ 0.076 EUR
30000+ 0.072 EUR
50000+ 0.068 EUR
Mindestbestellmenge: 10000
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Technische Details DF2B6.8M1ACT,L3F Toshiba Semiconductor and Storage

Description: TVS DIODE 5VWM 20VC CST2, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Applications: General Purpose, Capacitance @ Frequency: 0.3pF @ 1MHz, Current - Peak Pulse (10/1000µs): 2.5A (8/20µs), Voltage - Reverse Standoff (Typ): 5V (Max), Supplier Device Package: CST2, Bidirectional Channels: 1, Voltage - Breakdown (Min): 6V, Voltage - Clamping (Max) @ Ipp: 20V, Power - Peak Pulse: 50W, Power Line Protection: No, Part Status: Active.

Weitere Produktangebote DF2B6.8M1ACT,L3F nach Preis ab 0.077 EUR bis 0.52 EUR

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Preis ohne MwSt
DF2B6.8M1ACT,L3F DF2B6.8M1ACT,L3F Hersteller : Toshiba Semiconductor and Storage DF2B6.8M1ACT_datasheet_en_20180202.pdf?did=13209&prodName=DF2B6.8M1ACT Description: TVS DIODE 5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
auf Bestellung 73054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
60+ 0.29 EUR
100+ 0.18 EUR
500+ 0.13 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
5000+ 0.092 EUR
Mindestbestellmenge: 36
DF2B6.8M1ACT,L3F DF2B6.8M1ACT,L3F Hersteller : Toshiba DF2B6_8M1ACT_datasheet_en_20180202-1916135.pdf ESD Suppressors / TVS Diodes ESD Bi-Directional Protection Diode
auf Bestellung 39711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.52 EUR
10+ 0.37 EUR
100+ 0.15 EUR
1000+ 0.097 EUR
2500+ 0.093 EUR
10000+ 0.079 EUR
20000+ 0.077 EUR
Mindestbestellmenge: 6
DF2B6.8M1ACT,L3F DF2B6.8M1ACT,L3F Hersteller : Toshiba 572df2b6.8m1act_datasheet_en_20180202.pdf.pdf ESD Suppressor Diode TVS Bi-Dir 5V 20Vc 2-Pin CST T/R
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