DF11MR12W1M1PB11BPSA1 Infineon Technologies
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 239.57 EUR |
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Technische Details DF11MR12W1M1PB11BPSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 50A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 50A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V, Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 20mA, Supplier Device Package: AG-EASY1B-2.
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| DF11MR12W1M1PB11BPSA1 | Hersteller : Infineon Technologies |
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DF11MR12W1M1PB11BPSA1 | Hersteller : Infineon Technologies |
Description: SIC 2N-CH 1200V 50A AG-EASY1B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 20mA Supplier Device Package: AG-EASY1B-2 |
Produkt ist nicht verfügbar |