DF11MR12W1M1B11BOMA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - DF11MR12W1M1B11BOMA1 - DF11MR12 INSULATED GATE BIPOLAR TRANSIS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details DF11MR12W1M1B11BOMA1 ROCHESTER ELECTRONICS
Description: SIC 2N-CH 1200V AG-EASY1BM-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 50A, Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V, Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V, Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V, Vgs(th) (Max) @ Id: 5.5V @ 20mA, Supplier Device Package: AG-EASY1BM-2.
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Description: SIC 2N-CH 1200V AG-EASY1BM-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Vgs(th) (Max) @ Id: 5.5V @ 20mA Supplier Device Package: AG-EASY1BM-2 |
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