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DDTD123YC-7-F

DDTD123YC-7-F Diodes Incorporated

DDTD_XXXX_C.pdf Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1779000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.085 EUR
6000+ 0.079 EUR
9000+ 0.065 EUR
30000+ 0.064 EUR
75000+ 0.058 EUR
150000+ 0.05 EUR
Mindestbestellmenge: 3000
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Technische Details DDTD123YC-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote DDTD123YC-7-F nach Preis ab 0.06 EUR bis 0.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DDTD123YC-7-F DDTD123YC-7-F Hersteller : Diodes Incorporated DDTD_XXXX_C.pdf Digital Transistors 200MW 2.2K 10K
auf Bestellung 12228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.51 EUR
10+ 0.34 EUR
100+ 0.14 EUR
1000+ 0.099 EUR
3000+ 0.076 EUR
9000+ 0.069 EUR
24000+ 0.06 EUR
Mindestbestellmenge: 6
DDTD123YC-7-F DDTD123YC-7-F Hersteller : Diodes Incorporated DDTD_XXXX_C.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1780886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
51+ 0.35 EUR
104+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
Mindestbestellmenge: 35
DDTD123YC-7-F DDTD123YC-7-F Hersteller : Diodes Inc ds30384.pdf Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
DDTD123YC-7-F DDTD123YC-7-F Hersteller : Diodes Zetex ds30384.pdf Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
DDTD123YC-7-F DDTD123YC-7-F Hersteller : Diodes Zetex ds30384.pdf Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar