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DDA124EH-7

DDA124EH-7 Diodes Incorporated

ds30420.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - Pre-Biased 150MW 22K
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.74 EUR
10+ 0.56 EUR
100+ 0.35 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
3000+ 0.15 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 4
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Technische Details DDA124EH-7 Diodes Incorporated

Description: TRANS PREBIAS DUAL PNP SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-563, Part Status: Active.

Weitere Produktangebote DDA124EH-7 nach Preis ab 0.27 EUR bis 0.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DDA124EH-7 DDA124EH-7 Hersteller : Diodes Incorporated ds30420.pdf Description: TRANS PREBIAS DUAL PNP SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 5994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
26+ 0.7 EUR
100+ 0.47 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 21
DDA124EH-7 DDA124EH-7 Hersteller : Diodes Incorporated ds30420.pdf Description: TRANS PREBIAS DUAL PNP SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Part Status: Active
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