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DACMI80N1200

DACMI80N1200 DACO Semiconductor


DACMI80N1200.pdf Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+97.13 EUR
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Technische Details DACMI80N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 50A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 34mΩ, Pulsed drain current: 250A, Power dissipation: 460W, Technology: SiC, Gate-source voltage: -10...20V, Operating temperature: -55...150°C, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote DACMI80N1200 nach Preis ab 97.13 EUR bis 97.13 EUR

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DACMI80N1200 DACMI80N1200 Hersteller : DACO Semiconductor DACMI80N1200.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+97.13 EUR