DACMI160N1200 DACO Semiconductor
Hersteller: DACO SemiconductorCategory: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 400A
Power dissipation: 580W
Technology: SiC
Gate-source voltage: -5...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 180.14 EUR |
| 3+ | 179.09 EUR |
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Technische Details DACMI160N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 110A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 20mΩ, Pulsed drain current: 400A, Power dissipation: 580W, Technology: SiC, Gate-source voltage: -5...20V, Operating temperature: -55...150°C, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMI160N1200 nach Preis ab 179.09 EUR bis 180.14 EUR
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DACMI160N1200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 110A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 400A Power dissipation: 580W Technology: SiC Gate-source voltage: -5...20V Operating temperature: -55...150°C Mechanical mounting: screw |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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