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CTLT3410-M621 TR

CTLT3410-M621 TR Central Semiconductor


ctlt3410-m621-54453.pdf Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN Low Vce(SAT) 40Vcbo 25Vceo 0.9W
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Technische Details CTLT3410-M621 TR Central Semiconductor

Description: TRANS NPN 25V 1A TLM621, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVFDFN, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TLM621, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 900 mW.

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CTLT3410-M621 TR Hersteller : Central Semiconductor Corp CTLT3410-M621_CTLT7410-M621_DS.pdf Description: TRANS NPN 25V 1A TLM621
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TLM621
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 900 mW
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