CSD88539NDT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 60V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 11250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.7 EUR |
| 500+ | 0.6 EUR |
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Technische Details CSD88539NDT Texas Instruments
Description: MOSFET 2N-CH 60V 15A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 15A, Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V, Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote CSD88539NDT nach Preis ab 0.62 EUR bis 1.58 EUR
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CSD88539NDT | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2.1W Polarisation: unipolar Gate charge: 7.2nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 23mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 901 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD88539NDT | Hersteller : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 15A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2.1W Polarisation: unipolar Gate charge: 7.2nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 23mΩ Type of transistor: N-MOSFET x2 |
auf Bestellung 901 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD88539NDT | Hersteller : Texas Instruments |
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auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD88539NDT | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 60V 15A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 11459 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD88539NDT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |