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CSD87503Q3ET

CSD87503Q3ET Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87503q3e Hersteller: Texas Instruments
Description: 30-V DUAL N-CHANNEL MOSFET, COMM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 17750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
250+2.09 EUR
500+ 1.83 EUR
1250+ 1.51 EUR
2500+ 1.41 EUR
6250+ 1.36 EUR
12500+ 1.35 EUR
Mindestbestellmenge: 250
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Produktbewertung abgeben

Technische Details CSD87503Q3ET Texas Instruments

Description: 30-V DUAL N-CHANNEL MOSFET, COMM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3), Part Status: Active.

Weitere Produktangebote CSD87503Q3ET nach Preis ab 1.94 EUR bis 3.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD87503Q3ET CSD87503Q3ET Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87503q3e Description: 30-V DUAL N-CHANNEL MOSFET, COMM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 17990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.08 EUR
10+ 2.77 EUR
25+ 2.61 EUR
100+ 2.22 EUR
Mindestbestellmenge: 6
CSD87503Q3ET CSD87503Q3ET Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87503q3e MOSFET 30-V Dual N-Channel MOSFET
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.29 EUR
10+ 2.96 EUR
100+ 2.38 EUR
500+ 1.94 EUR