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CSD87335Q3DT Texas Instruments
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Description: MOSFET 2N-CH 30V 25A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-LSON (3.3x3.3)
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 2.25 EUR |
500+ | 1.96 EUR |
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Technische Details CSD87335Q3DT Texas Instruments
Description: MOSFET 2N-CH 30V 25A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-LSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87335Q3DT nach Preis ab 1.46 EUR bis 3.34 EUR
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CSD87335Q3DT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-LSON (3.3x3.3) Part Status: Active |
auf Bestellung 1232 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87335Q3DT | Hersteller : Texas Instruments |
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auf Bestellung 8140 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87335Q3DT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 25A; 1.5W; LSON-CLIP8 Technology: NexFET™ Case: LSON-CLIP8 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Dimensions: 3.3x3.3mm Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 5.7/10.7nC Type of transistor: N-MOSFET x2 Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 25A Polarisation: unipolar Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD87335Q3DT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 25A; 1.5W; LSON-CLIP8 Technology: NexFET™ Case: LSON-CLIP8 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Dimensions: 3.3x3.3mm Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 5.7/10.7nC Type of transistor: N-MOSFET x2 Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 25A Polarisation: unipolar Drain-source voltage: 30V |
Produkt ist nicht verfügbar |