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CSD87313DMST Texas Instruments
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Description: MOSFET 2 N-CHANNEL 30V 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-WSON (3.3x3.3)
Part Status: Active
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 2.47 EUR |
500+ | 2.15 EUR |
1250+ | 1.82 EUR |
2500+ | 1.73 EUR |
6250+ | 1.67 EUR |
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Produktbewertung abgeben
Technische Details CSD87313DMST Texas Instruments
Description: MOSFET 2 N-CHANNEL 30V 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-WSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87313DMST nach Preis ab 1.52 EUR bis 3.84 EUR
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CSD87313DMST | Hersteller : Texas Instruments |
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auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87313DMST | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-WSON (3.3x3.3) Part Status: Active |
auf Bestellung 11571 Stücke: Lieferzeit 10-14 Tag (e) |
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