CSD87313DMS Texas Instruments
Hersteller: Texas InstrumentsMOSFET 30-V, N channel NexFET power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm 8-WSON -55 to 150
auf Bestellung 1791 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.85 EUR |
| 10+ | 2.57 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.4 EUR |
| 2500+ | 1.25 EUR |
| 5000+ | 1.21 EUR |
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Technische Details CSD87313DMS Texas Instruments
Description: MOSFET 2N-CH 30V 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-WSON (3.3x3.3).
Weitere Produktangebote CSD87313DMS
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CSD87313DMS | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-WSON (3.3x3.3) |
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CSD87313DMS | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 8WSON Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-WSON (3.3x3.3) |
Produkt ist nicht verfügbar |