CSD87312Q3E Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 30V 27A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.27 EUR |
| 5000+ | 1.22 EUR |
| 12500+ | 1.18 EUR |
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Technische Details CSD87312Q3E Texas Instruments
Description: MOSFET 2N-CH 30V 27A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 27A, Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V, Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87312Q3E nach Preis ab 0.92 EUR bis 2.78 EUR
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CSD87312Q3E | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 27A 8VSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
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Description: MOSFET 2N-CH 30V 27A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Rds On (Max) @ Id, Vgs: 33mOhm @ 7A , 8V Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
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CSD87312Q3E Produktcode: 166985 |
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