CSD86356Q5D Texas Instruments
Hersteller: Texas Instruments
MOSFET 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-VSON-CLIP -55 to 150
MOSFET 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-VSON-CLIP -55 to 150
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.69 EUR |
10+ | 2.22 EUR |
100+ | 1.76 EUR |
500+ | 1.45 EUR |
1000+ | 1.24 EUR |
2500+ | 1.18 EUR |
5000+ | 1.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD86356Q5D Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 12W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6).
Weitere Produktangebote CSD86356Q5D nach Preis ab 1.27 EUR bis 1.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
CSD86356Q5D | Hersteller : Texas Instruments |
Description: MOSFET 25V Packaging: Bulk |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||
CSD86356Q5D | Hersteller : Texas Instruments | Power Block 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
||||||
CSD86356Q5D | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 12W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) |
Produkt ist nicht verfügbar |
||||||
CSD86356Q5D | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 12W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) |
Produkt ist nicht verfügbar |