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CSD86356Q5D

CSD86356Q5D Texas Instruments


csd86356q5d.pdf suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86356q5d Hersteller: Texas Instruments
MOSFET 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-VSON-CLIP -55 to 150
auf Bestellung 414 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.69 EUR
10+ 2.22 EUR
100+ 1.76 EUR
500+ 1.45 EUR
1000+ 1.24 EUR
2500+ 1.18 EUR
5000+ 1.14 EUR
Mindestbestellmenge: 2
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Technische Details CSD86356Q5D Texas Instruments

Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 12W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6).

Weitere Produktangebote CSD86356Q5D nach Preis ab 1.27 EUR bis 1.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD86356Q5D Hersteller : Texas Instruments csd86356q5d.pdf Description: MOSFET 25V
Packaging: Bulk
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
387+1.27 EUR
Mindestbestellmenge: 387
CSD86356Q5D Hersteller : Texas Instruments slps665.pdf Power Block 8-Pin VSON-CLIP EP T/R
Produkt ist nicht verfügbar
CSD86356Q5D CSD86356Q5D Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86356q5d Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 12W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Produkt ist nicht verfügbar
CSD86356Q5D CSD86356Q5D Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd86356q5d Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 12W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Produkt ist nicht verfügbar