CSD86350Q5DT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 25V 40A 8LSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 3.22 EUR |
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Technische Details CSD86350Q5DT Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 13W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V, Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA, Supplier Device Package: 8-LSON (5x6), Part Status: Active.
Weitere Produktangebote CSD86350Q5DT nach Preis ab 2.6 EUR bis 5.05 EUR
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CSD86350Q5DT | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 40A 8LSON Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 13W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA Supplier Device Package: 8-LSON (5x6) Part Status: Active |
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