CSD86336Q3DT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 25V 20A 8VSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 125°C
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 1.53 EUR |
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Technische Details CSD86336Q3DT Texas Instruments
Description: MOSFET 2N-CH 25V 20A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 125°C, Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V, Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD86336Q3DT nach Preis ab 1.38 EUR bis 3.19 EUR
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CSD86336Q3DT | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 20A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 125°C Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD86336Q3DT | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 20A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 125°C Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 10001 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD86336Q3DT | Hersteller : Texas Instruments |
MOSFET 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 20 A 8-VSON-CLIP -55 to 150 |
Produkt ist nicht verfügbar |