CSD86311W1723 Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 25V 4.5A 12DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V
Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 12-DSBGA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.63 EUR |
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Technische Details CSD86311W1723 Texas Instruments
Description: MOSFET 2N-CH 25V 4.5A 12DSBGA, Packaging: Tape & Reel (TR), Package / Case: 12-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V, Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 12-DSBGA.
Weitere Produktangebote CSD86311W1723 nach Preis ab 0.48 EUR bis 1.57 EUR
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CSD86311W1723 | Hersteller : Texas Instruments |
Power Block 12-Pin Wafer T/R |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD86311W1723 | Hersteller : Texas Instruments |
Power Block 12-Pin Wafer T/R |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD86311W1723 | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 25V 4.5A 12DSBGA Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V Rds On (Max) @ Id, Vgs: 39mOhm @ 2A, 8V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 12-DSBGA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD86311W1723 | Hersteller : Texas Instruments |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 1639 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD86311W1723 | Hersteller : Texas Instruments |
High Frequency Synchronous Power Module |
Produkt ist nicht verfügbar |
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CSD86311W1723 | Hersteller : Texas Instruments |
Power Block 12-Pin Wafer T/R |
Produkt ist nicht verfügbar |
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CSD86311W1723 | Hersteller : Texas Instruments |
Power Block 12-Pin Wafer T/R |
Produkt ist nicht verfügbar |