CSD83325L Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Bulk
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Bulk
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
auf Bestellung 361750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1484+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD83325L Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-PicoStar, Part Status: Active.
Weitere Produktangebote CSD83325L nach Preis ab 0.3 EUR bis 0.95 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CSD83325L | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTAR Packaging: Cut Tape (CT) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
auf Bestellung 1775 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CSD83325L | Hersteller : Texas Instruments | MOSFET 12-V, N channel NexFET power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR |
auf Bestellung 5217 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CSD83325L | Hersteller : Texas Instruments | Power Block 6-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
CSD83325L | Hersteller : Texas Instruments | High Frequency Synchronous Power Module |
Produkt ist nicht verfügbar |
||||||||||||||||||
CSD83325L | Hersteller : Texas Instruments | Power Block 6-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
CSD83325L | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
Produkt ist nicht verfügbar |