CSD25485F5T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 5.3A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.99 EUR |
| 500+ | 0.85 EUR |
| 1250+ | 0.69 EUR |
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Technische Details CSD25485F5T Texas Instruments
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 3-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V.
Weitere Produktangebote CSD25485F5T nach Preis ab 0.62 EUR bis 1.59 EUR
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CSD25485F5T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V |
auf Bestellung 2465 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25485F5T | Hersteller : Texas Instruments |
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25485F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -31A; 1.4W Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -31A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 0.25Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD25485F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -31A; 1.4W Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -31A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 0.25Ω |
Produkt ist nicht verfügbar |