CSD25480F3T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 1.7A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.86 EUR |
| 500+ | 0.74 EUR |
| 1250+ | 0.63 EUR |
| 2500+ | 0.56 EUR |
| 6250+ | 0.53 EUR |
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Technische Details CSD25480F3T Texas Instruments
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): -12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V.
Weitere Produktangebote CSD25480F3T nach Preis ab 0.54 EUR bis 1.51 EUR
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CSD25480F3T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 1.7A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 132mOhm @ 400mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V |
auf Bestellung 11702 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25480F3T | Hersteller : Texas Instruments |
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auf Bestellung 1682 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25480F3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -10.6A; 500mW Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -10.6A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: -20V Drain current: -1.7A On-state resistance: 840mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD25480F3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -10.6A; 500mW Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -10.6A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: -20V Drain current: -1.7A On-state resistance: 840mΩ |
Produkt ist nicht verfügbar |