CSD25401Q3 Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 14A/60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
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Technische Details CSD25401Q3 Texas Instruments
Description: MOSFET P-CH 20V 14A/60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V.
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CSD25401Q3 | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 14A/60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V |
Produkt ist nicht verfügbar |
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CSD25401Q3 | Hersteller : Texas Instruments |
MOSFET P-Ch NexFET Power MOSFETs |
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