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CSD25202W15T Texas Instruments
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Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Bulk
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
565+ | 0.87 EUR |
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Technische Details CSD25202W15T Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V.
Weitere Produktangebote CSD25202W15T nach Preis ab 0.89 EUR bis 2.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD25202W15T | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25202W15T | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25202W15T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -38A; 0.5W; DSBGA9 Case: DSBGA9 Mounting: SMD Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -38A Drain-source voltage: -20V Drain current: -4A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD25202W15T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD25202W15T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -38A; 0.5W; DSBGA9 Case: DSBGA9 Mounting: SMD Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -38A Drain-source voltage: -20V Drain current: -4A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |