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CSD25202W15T

CSD25202W15T Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25202w15 Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Bulk
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
565+0.87 EUR
Mindestbestellmenge: 565
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Technische Details CSD25202W15T Texas Instruments

Description: MOSFET P-CH 20V 4A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V.

Weitere Produktangebote CSD25202W15T nach Preis ab 0.89 EUR bis 2.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD25202W15T CSD25202W15T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25202w15 Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
250+1.27 EUR
500+ 1.09 EUR
1250+ 0.89 EUR
Mindestbestellmenge: 250
CSD25202W15T CSD25202W15T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25202w15 Description: MOSFET P-CH 20V 4A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.02 EUR
11+ 1.65 EUR
100+ 1.29 EUR
Mindestbestellmenge: 9
CSD25202W15T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25202w15 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -38A; 0.5W; DSBGA9
Case: DSBGA9
Mounting: SMD
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD25202W15T CSD25202W15T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25202w15 MOSFET 20V PCh NexFET Pwr MOSFET
Produkt ist nicht verfügbar
CSD25202W15T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25202w15 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -38A; 0.5W; DSBGA9
Case: DSBGA9
Mounting: SMD
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar