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CSD23201W10 Texas Instruments
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Description: MOSFET P-CH 12V 2.2A 4DSBGA
Packaging: Bulk
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V
auf Bestellung 455050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1211+ | 0.41 EUR |
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Technische Details CSD23201W10 Texas Instruments
Description: MOSFET P-CH 12V 2.2A 4DSBGA, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-DSBGA (1x1), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V.
Weitere Produktangebote CSD23201W10 nach Preis ab 0.89 EUR bis 0.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD23201W10 | Hersteller : Texas Instruments |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD23201W10 | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-DSBGA (1x1) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V |
Produkt ist nicht verfügbar |
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CSD23201W10 | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-DSBGA (1x1) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V |
Produkt ist nicht verfügbar |