CSD22205L Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 8V 7.4A 4PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 4-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.29 EUR |
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Technische Details CSD22205L Texas Instruments
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 4-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 4-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V.
Weitere Produktangebote CSD22205L nach Preis ab 0.25 EUR bis 0.9 EUR
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CSD22205L | Hersteller : Texas Instruments |
MOSFET -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection 4-PICOSTAR -55 to 150 |
auf Bestellung 5157 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD22205L | Hersteller : Texas Instruments |
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V |
auf Bestellung 8226 Stücke: Lieferzeit 10-14 Tag (e) |
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