CSD18541F5 Texas Instruments
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
| 45000+ | 0.096 EUR |
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Produktbewertung abgeben
Technische Details CSD18541F5 Texas Instruments
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V.
Weitere Produktangebote CSD18541F5 nach Preis ab 0.15 EUR bis 0.64 EUR
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CSD18541F5 | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 60V 2.2A 3PICOSTARPackaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18541F5 | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V |
auf Bestellung 8010 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18541F5 | Hersteller : Texas Instruments |
MOSFETs 60-V, N channel NexFET power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
auf Bestellung 7985 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18541F5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH 60V 2.2A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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CSD18541F5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH 60V 2.2A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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CSD18541F5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH 60V 2.2A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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CSD18541F5 | Hersteller : Texas Instruments |
Trans MOSFET N-CH 60V 2.2A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |